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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB762 2SB762A DESCRIPTION With TO-220C package Complement to type 2SD857/857A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH 2SB762 2SB762A 2SB762 EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -60 -80 -60 UNIT V V -80 -5 -4 -8 V A A W ae ae 2SB762A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB762 IC=-30mA; IB=0 2SB762A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB762 2SB762A 2SB762 2SB762A IC=-4A;IB=-0.4 A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS 2SB762 2SB762A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.5 -2.0 V V ICES Collector cut-off current -400 VCE=-80V; VBE=0 VCE=-30V; IB=0 -700 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V |I A ICEO Collector cut-off current |I A IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain Switching times ton toff Turn-on time Turn-off time HAN INC Q 70-150 P SEM GE IC=-3A ; VCE=-4V OND IC 40 15 TOR UC -7 250 0.3 |I mA s |I s IC=-4A ; IB1=-IB2=-0.4 A 1.3 hFE-1 classifications R 40-90 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB762 2SB762A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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